The CuO thin films were deposited on glass substrates by RF magnetron sputtering system at 75 W and 100 W. The evacuation process has an advantage such as keep away of contamination effect. This process took place under the argon buffer gas (99.999% pure) ambient. The working pressure was 1.75 × 10−1 Torr. The used target was PU-H71 50 mm diameter. The distance between the target and substrate was 50 mm. The mentioned glass substrate cleaned frequently in an ultrasonic bath to prevent contamination before starting deposition procedure. Pressure gauges used for keeping the steady and controllable situation during the sputtering procedure. To compare the result of prepared thin films, we employ two different powers means 75 W and 100 W for the film deposition. The sputtering time was strictly adjusted to 30 min.
XRD and EDX determined the elemental properties of the deposited samples. The EDX results are lymph summarized in Table 1 in detail to prove the presence of Cu and O elements within the samples.
XRD and EDX determined the elemental properties of the deposited samples. The EDX results are lymph summarized in Table 1 in detail to prove the presence of Cu and O elements within the samples.